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mrf6s21100nr1 MRF6S21100NBR1 1 rf device data freescale semiconductor rf power field effect transistors n-channel enhancement-mode lateral mosfets designed for w-cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn- pcs/cellular radio, wll and td-scdma applications. ? typical 2-carrier w-cdma performance: v dd = 28 volts, i dq = 1050 ma, p out = 23 watts avg., f = 2157.5 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain 14.5 db drain efficiency 25.5% im3 @ 10 mhz offset -37 dbc in 3.84 mhz bandwidth acpr @ 5 mhz offset -40 dbc in 3.84 mhz bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 100 watts cw output power features ? characterized with series equivalent large-signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? 225 c capable plastic package ? n suffix indicates lead-free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain-source voltage v dss -0.5, +68 vdc gate-source voltage v gs -0.5, +12 vdc storage temperature range t stg -65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 100 w cw case temperature 73 c, 23 w cw r jc 0.57 0.66 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s21100n rev. 3, 12/2008 freescale semiconductor technical data mrf6s21100nr1 MRF6S21100NBR1 2110-2170 mhz, 23 w avg., 28 v 2 x w-cdma lateral n-channel rf power mosfets case 1486-03, style 1 to-270 wb-4 plastic mrf6s21100nr1 case 1484-04, style 1 to-272 wb-4 plastic MRF6S21100NBR1 ? freescale semiconductor , inc., 2005-2008. all rights reserved.
2 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 table 3. esd protection characteristics test methodology class human body model (per jesd22-a114) 1b (minimum) machine model (per eia/jesd22-a115) a (minimum) charge device model (per jesd22-c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22-a113, ipc/jedec j-std-020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss 1 adc gate-source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 330 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1050 madc) v gs(q) 2.8 vdc fixture gate quiescent voltage (1) (v dd = 28 vdc, i d = 1050 madc, measured in functional test) v gg(q) 2.2 3.1 4.4 vdc drain-source on-voltage (v gs = 10 vdc, i d = 3.3 adc) v ds(on) 0.24 vdc dynamic characteristics (2) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 1.5 pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg., f1 = 2112.5 mhz, f2 = 2157.5 mhz, 2-carrier w-cdma, 3.84 mhz channel bandwidth carriers, acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 13 14.5 16 db drain efficiency d 24 25.5 36 % intermodulation distortion im3 -47 -37 -35 dbc adjacent channel power ratio acpr -50 -40 -38 dbc input return loss irl -12 -10 db 1. v gg = 11/10 x v gs(q) . parameter measured on freescale test fixture, due to resistive divider network on the board. refer to test circuit schematic. 2. part is internally matched both on input and output.
mrf6s21100nr1 MRF6S21100NBR1 3 rf device data freescale semiconductor figure 1. mrf6s21100nr1(nbr1) test circuit schematic z7 0.259 x 0.880 microstrip z8 0.215 x 0.230 microstrip z9 0.787 x 0.084 microstrip z11, z12 1.171 x 0.120 microstrip pcb arlon cuclad 250gx-0300-55-22, 0.030 , r = 2.5 z1, z10 0.743 x 0.084 microstrip z2 0.893 x 0.084 microstrip z3 0.175 x 0.084 microstrip z4 0.420 x 0.800 microstrip z5 1.231 x 0.040 microstrip z6 0.100 x 0.880 microstrip v bias v supply rf output rf input dut c1 c2 c3 c4 c5 c6 r1 z1 z2 z3 c7 z7 c9 z8 z6 r2 z5 z4 z9 z10 z12 z11 v supply c10 c11 c12 + b1 r3 c8 table 6. mrf6s21100nr1(nbr1) test circuit component designations and values part description part number manufacturer b1 ferrite bead 25008051107y0 fair-rite c1 10 f, 35 v tantalum capacitor t491d106k035at kemet c2 0.01 f chip capacitor c1825c103j1gac kemet c3, c4, c10 5.1 pf chip capacitors atc100b5r1bt500xt atc c5, c6, c11, c12 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c7 10 pf chip capacitor atc100b100bt500xt atc c8 1.1 pf chip capacitor atc100b1r1bt500xt atc c9 5.1 pf chip capacitor (mrf6s21100nr1) 8.2 pf chip capacitor (MRF6S21100NBR1) atc100b5r1bt500xt atc100b8r2bt500xt atc atc r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 10 k , 1/4 w chip resistor crcw12061002fkea vishay r3 10 , 1/4 w chip resistor crcw120610r0fkea vishay
4 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 figure 2. mrf6s21100nr1(nbr1) test circuit component layout mrf6s21100n/nb, rev. 3 cut out area c11 r1 c1 c2 c3 r3 b1 r2 c7 c8 c4 c5 c6 c9 c12 c10
mrf6s21100nr1 MRF6S21100NBR1 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) g ps , power gain (db) g ps , power gain (db) 2240 13 15 2060 -46 28 f, frequency (mhz) figure 3. 2-carrier w-cdma broadband performance @ p out = 22.5 watts avg. -14 -9 -10 input return loss (db) irl, im3 (dbc), acpr (dbc) -13 d , drain efficiency (%) 14.8 27 13.8 -31 13.6 -34 13.4 -40 13.2 -43 2100 2120 2140 2160 14 14.2 14.4 14.6 26 25 24 -37 2080 2200 2180 2220 -1 1 -12 v dd = 28 vdc, p out = 22.5 w (avg.), i dq = 1050 ma 2-carrier w-cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) irl g ps acpr im3 d 2240 12.2 14.2 2060 -34 38 f, frequency (mhz) figure 4. 2-carrier w-cdma broadband performance @ p out = 45 watts avg. -14 -9 -10 input return loss (db) irl, im3 (dbc), acpr (dbc) -13 d , drain efficiency (%) 14 37 13 -24 12.8 -26 12.6 -30 12.4 -32 2100 2120 2140 2160 13.2 13.4 13.6 13.8 36 35 34 -28 2080 2200 2180 2220 -1 1 -12 v dd = 28 vdc, p out = 45 w (avg.), i dq = 1050 ma 2-carrier w-cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) irl acpr im3 d 300 10 16 0.1 i dq = 1575 ma 1312 ma p out , output power (watts) pep figure 5. two-t one power gain versus output power v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements, 10 mhz tone spacing 525 ma 787 ma 15 14 13 12 11 100 10 1 1050 ma 100 -60 -1 0 p out , output power (watts) pep figure 6. third order intermodulation distortion versus output power v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements, 10 mhz tone spacing -2 0 -3 0 -4 0 -5 0 10 intermodulation distortion (dbc) imd, third order 0.1 1 300 i dq = 525 ma 1312 ma 787 ma 1050 ma 1575 ma g ps
6 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 typical characteristics d , drain efficiency (%), g ps , power gain (db) g ps , power gain (db) g ps , power gain (db) 300 -60 0 0.1 3rd order two-t one spacing (mhz) figure 7. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 100 w (pep) i dq = 1050 ma, two-tone measurements (f1 + f2)/2 = center frequency of 2140 mhz 5th order 7th order -2 0 -3 0 -4 0 -5 0 10 1 46 48 58 32 actual p1db = 51.3 dbm (135.8 w) ideal p in , input power (dbm) figure 8. pulsed cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 1050 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2140 mhz p3db = 51.9 dbm (156.3 w) 56 54 52 50 44 42 40 34 36 38 100 0 40 0.5 -60 -20 g ps acpr im3 p out , output power (watts) avg. figure 9. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) 30 -25 20 -30 10 -40 5 -50 10 1 300 11 18 0.1 0 70 g ps p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 1050 ma f = 2140 mhz 16 50 15 40 14 30 13 20 12 10 10 100 200 9 15 0 v dd = 24 v p out , output power (watts) cw figure 11. power gain versus output power 28 v 32 v 14 12 11 10 20 40 60 80 100 120 140 160 d , drain efficiency (%) d -1 0 100 35 25 15 -55 -45 -35 17 60 1 13 180 t c = 25 c -30 c 85 c 25 c 25 c 85 c -30 c -30 c 25 c v dd = 28 vdc, i dq = 1050 ma, f1 = 2135 mhz f2 = 2145 mhz, 2-carrier w-cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 25 c -30 c 85 c d 25 c t c = -30 c 85 c i dq = 1050 ma f = 2140 mhz
mrf6s21100nr1 MRF6S21100NBR1 7 rf device data freescale semiconductor typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 23 w avg., and d = 25.5%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 w-cdma test signal 10 0.0001 100 0 peak-t o-a verage (db) figure 13. ccdf w-cdma 3gpp, test model 1, 64 dpch, 67% clipping, single-carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) figure 14. 2\carrier w\cdma spectrum f, frequency (mhz) 3.84 mhz channel bw -im3 in 3.84 mhz bw +im3 in 3.84 mhz bw -acpr in 3.84 mhz bw +acpr in 3.84 mhz bw (db) +20 +30 0 -10 -40 -50 -60 -70 -80 -20 20 515 10 0 -5 -10 -15 -2 0 -25 25 -30 w-cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf
8 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 figure 15. series equivalent source and load impedance f mhz z source z load 2110 2140 2170 3.56 - j3.92 3.34 - j3.90 3.55 - j3.97 1.62 - j3.47 1.53 - j3.19 1.44 - j2.89 v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg. f mhz z source z load 2110 2140 2170 3.51 - j3.78 3.29 - j3.78 3.50 - j3.83 1.62 - j3.54 1.51 - j3.26 1.41 - j2.95 v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg. MRF6S21100NBR1 mrf6s21100nr1 z o = 5 z source z load f = 2110 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 2170 mhz f = 2110 mhz f = 2170 mhz f = 2110 mhz f = 2170 mhz z o = 5 z load z source f = 2110 mhz f = 2170 mhz
mrf6s21100nr1 MRF6S21100NBR1 9 rf device data freescale semiconductor td-scdma characterization figure 16. mrf6s21100nr1(nbr1) test circuit schematic z7 0.320 x 0.880 microstrip z8 0.370 x 0.200 microstrip z9 0.650 x 0.084 microstrip z10 1.230 x 0.084 microstrip z11 0.870 x 0.120 microstrip pcb arlon cuclad 250gx-0300-55-22, 0.030 , r = 2.55 z1 1.250 x 0.084 microstrip z2 0.930 x 0.084 microstrip z3 0.470 x 0.800 microstrip z4 0.090 x 0.800 microstrip z5 1.500 x 0.040 microstrip z6 0.160 x 0.880 microstrip v bias v supply rf output rf input dut c1 c2 c3 c4 c5 c6 r1 z1 z2 c7 z6 c9 z7 z5 r2 z4 z3 z8 z9 z11 z10 v supply c10 c11 c12 + b1 r3 c8 table 7. mrf6s21100nr1(nbr1) test circuit component designations and values part description part number manufacturer b1 ferrite bead 25008051107y0 fair-rite c1 10 f, 35 v tantalum capacitor t491d106k035at kemet c2 0.01 f chip capacitor c1825c103j1gac kemet c3, c4, c10 5.1 pf chip capacitors atc100b5r1bt500xt atc c5, c6, c11, c12 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c7 10 pf chip capacitor atc100b100bt500xt atc c8 1.1 pf chip capacitor atc100b1r1bt500xt atc c9 8.2 pf chip capacitor atc100b8r2bt500xt atc r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 10 k , 1/4 w chip resistor crcw12061002fkea vishay r3 10 , 1/4 w chip resistor crcw120610r0fkea vishay
10 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 figure 17. mrf6s21100nr1(nbr1) test circuit component layout td-scdma mrf6s21100n/nb, rev. 3 b1 r3 r1 c1 c2 c3 c8 c7 c4 c5 c6 c9 c10 c11 c12 cut out area r2
mrf6s21100nr1 MRF6S21100NBR1 11 rf device data freescale semiconductor typical characteristics -60 0 p out , output power (watts) avg. -3 0 18 -3 5 15 -4 0 9 03 9 6 -5 5 figure 18. 3-carrier td-scdma acpr, alt and drain efficiency versus output power alt/acpr (dbc) -4 5 -5 0 1 3 adj-u d , drain efficiency (%) d 3-carrier td-scdma v dd = 28 v, i dq = 900 ma f = 2017.5 mhz alt-u alt-l 26 45 78 12 adj-l -60 0 p out , output power (watts) avg. -3 0 18 -3 5 15 12 0.5 9 -5 0 figure 19. 6-carrier td-scdma acpr, alt and drain efficiency versus output power -4 0 -4 5 1.5 6 adj-l d , drain efficiency (%) d 6-carrier td-scdma v dd = 28 v, i dq = 900 ma f = 2017.5 mhz alt-u alt-l alt/acpr (dbc) adj-u 2.5 3.5 4.5 5.5 6.5 7.5 -5 5 3 td-scdma test signal -80 -130 -30 (dbm) -40 -50 -60 -70 -90 -100 -1 10 -120 1.5 mhz center 2.0175 ghz span 15 mhz f, frequency (mhz) figure 20. 3-carrier td-scdma spectrum 1.28 mhz channel bw -80 -130 -30 (dbm) -40 -50 -60 -70 -90 -100 -1 10 -120 2.5 mhz center 2.0175 ghz span 25 mhz f, frequency (mhz) figure 21. 6-carrier td-scdma spectrum 1.28 mhz channel bw vbw = 300 khz sweep time = 200 ms rbw = 30 khz vbw = 300 khz sweep time = 200 ms rbw = 30 khz +alt2 in 1.28 mhz bw +3.2 mhz offset +alt1 in 1.28 mhz bw +1.6 mhz offset -al t1 in 1.28 mhz bw -1.6 mhz offset +alt2 in 1.28 mhz bw +3.2 mhz offset +alt1 in 1.28 mhz bw +1.6 mhz offset -al t1 in 1.28 mhz bw -1.6 mhz offset -al t2 in 1.28 mhz bw -3.2 mhz offset -al t2 in 1.28 mhz bw -3.2 mhz offset
12 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 z o = 10 z source z load f = 1950 mhz f = 1950 mhz f = 2070 mhz f = 2070 mhz v dd = 28 vdc, i dq = 900 ma f mhz z source z load 1950 1.43 - j4.56 3.61 - j4.19 1960 1.57 - j4.80 3.86 - j4.40 1970 1.72 - j5.12 4.18 - j4.62 1980 1.65 - j5.27 4.21 - j4.81 1990 1.48 - j4.98 3.91 - j4.59 2000 1.38 - j4.45 3.56 - j4.07 2010 1.35 - j4.01 3.31 - j3.62 2020 1.30 - j3.57 3.14 - j3.40 2030 1.21 - j3.62 2.99 - j3.31 2040 1.25 - j3.61 3.02 - j3.31 2050 1.34 - j3.76 3.19 - j3.44 2060 1.37 - j4.08 3.38 - j3.75 2070 1.24 - j4.24 3.33 - j3.99 z source = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 22. series equivalent source and load impedance td-scdma z source z load input matching network device under test output matching network
mrf6s21100nr1 MRF6S21100NBR1 13 rf device data freescale semiconductor package dimensions
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mrf6s21100nr1 MRF6S21100NBR1 15 rf device data freescale semiconductor
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mrf6s21100nr1 MRF6S21100NBR1 19 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over-molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 jan. 2007 ? added td-scdma to data sheet description paragraph, p. 1 ? removed total device dissipation from max ratings table as data was redundant (information already provided in thermal characteristics table), p. 1 ? added v gg(q) and removed min and max value for v gs(q) in on characteristics table to account for the test fixture's resistor divider network, p. 2 ? removed forward transconductance from on characteristics table as it no longer provided usable information, p. 2 ? updated part numbers in table 6, component designations and values, to rohs compliant part numbers, p. 3 ? adjusted scale for fig. 5, two-t one power gain versus output power, to better match the device's capabilities, p. 5 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added td-scdma test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9-12 ? added product documentation and revision history, p. 17 3 dec. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn13232, p. 1, 2 ? changed storage temperature range in max ratings table from -65 to +175 to -65 to +150 for standardization across products, p. 1 ? added case operating temperature limit to the maximum ratings table and set limit to 150 c, p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related continuous use at maximum temperature will affect mttf footnote added and changed 200 c to 225 c in capable plastic package bullet, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , on characteristics table, p. 2 ? updated pcb information to show more specific material details, figs. 1, 16, test circuit schematic, p. 3, 9 ? updated part numbers in tables 6, 7, component designations and values, to latest rohs compliant part numbers, p. 3, 9 ? corrected fig. 15, series equivalent source and load impedance's z source and z load copy to single-ended, p. 8 ? replaced case outline 1486-03, issue c, with 1486-03, issue d, p. 13-15. added pin numbers 1 through 4 on sheet 1. ? replaced case outline 1484-04, issue d, with 1484-04, issue e, p. 16-18. added pin numbers 1 through 4 on sheet 1, replacing gate and drain notations with pin 1 and pin 2 designations.
20 rf device data freescale semiconductor mrf6s21100nr1 MRF6S21100NBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals, must be validated for each customer application by customer's technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor , inc. 2005-2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s21100n rev. 3, 12/2008

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